U.S. Chip Makers Embrace Collaboration
In a bid to accelerate 5G wireless connectivity, GlobalFoundries is licensing gallium nitride technology from Raytheon Technologies.
The GaN-on-Si devices will be fabricated at GlobalFoundries’ Fab 9 facility in Essex Junction, Vt. As horse-trading advances in the Senate for funding U.S. semiconductor R&D, Sen. Patrick Leahy, D-Vt., chairman of the Senate Appropriations Committee, called the 5G chip partnership “good news for the nation’s semiconductor supply chain and competitiveness.
https://www.eetimes.com/u-s-chip-makers-embrace-collaboration/The deal with Raytheon reflects the U.S. foundry operator’s emphasis on key RF components required to keep pace in the race to deploy 5G and, eventually, 6G wireless networks. Those networks will transport everything from streaming video to big data collected by edge AI devices.
Company officials have stressed GlobalFoundries’ emphasis on “high-mix applications [with] modest volumes,” including those incorporating RF front-ends, microcontrollers and battery management. That pragmatic strategy varies markedly from cutting-edge process technologies offered by foundry leaders like Taiwan Semiconductor Manufacturing Co. (TSMC) and Samsung Electronics.
Fab 9 foi uma das Fab que a GF recebeu da IBM, o processo mais recente ali é 90nm.