Intel lets us know today that they have achieved a major breakthrough in the field of transistors. They achieved to make a High-K Metal gate transistor which has a 60% bigger capacity towards to the current CMOS-transistors. This means that these transistors will be able to switch faster. Another important fact is that the power leakage of these transistors is 100 times smaller! This will results in more power efficient processors which run cooler.

http://www.dvhardware.net/article2075.html

Intel expects that they will be able to use this new transistor in 2007 for their P1266-proces, and that they will be able to make them at 45 nanometer.

nice :) vejamos como se comporta esse transistor.